The current-voltage and capacitance-voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

Ozerli H., Karteri I., KARATAŞ Ş., ALTINDAL Ş.

MATERIALS RESEARCH BULLETIN, cilt.53, ss.211-217, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 53
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.materresbull.2014.02.011
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.211-217
  • Anahtar Kelimeler: Electronic materials, Semiconductors, Crystal growth, Semiconductivity, Electrical properties, Electronic structure, METAL-SEMICONDUCTOR INTERFACES, DEPENDENT CURRENT-VOLTAGE, I-V-T, BARRIER-HEIGHT, ELECTRICAL CHARACTERISTICS, DENSITY DISTRIBUTION, CURRENT TRANSPORT, STATE DENSITY, DIODES, SI
  • Gazi Üniversitesi Adresli: Evet

Özet

We have investigated the temperature-dependent current voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280-415 K. The barrier height for the Au/n-type GaAs SBDs from the I-V and C-V characteristics have varied from 0.901 eV to 0.963 eV (I-V) and 1.234 eV to 0.967 eV (C-V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280-415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(Io/T-2) versus (kT)(-1) and ln(Io/T-2) versus (nkT)(-1) plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively,A Phi(b0) versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Phi(b0) = 1.071 eV and sigma(0) = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot. (C) 2014 Elsevier Ltd. All rights reserved.