Microwave Whispering-Gallery-Mode Photoconductivity Measurement of Recombination Lifetime in Silicon
ADVANCED ELECTROMAGNETICS, cilt.8, sa.2, ss.101-107, 2019 (ESCI, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 8 Sayı: 2
- Basım Tarihi: 2019
- Doi Numarası: 10.7716/aem.v8i2.1127
- Dergi Adı: ADVANCED ELECTROMAGNETICS
- Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
- Sayfa Sayıları: ss.101-107
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Gazi Üniversitesi Adresli: Evet
Özet
We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetimes in high-resistivity semiconductor layers. We applied the method to undoped Si wafers of high resistivity, at 5 and 30 kOhm*cm, and measured conductivity relaxation times of 10 and 14 microseconds, respectively. In the wafers being considered, relaxation times are likely to be defined by the electron-hole diffusion from the bulk to the wafer surface.