Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality

Bulbul M. M., Smith S., Obradovic B., Cheng T., Foxon C.

EUROPEAN PHYSICAL JOURNAL B, cilt.14, sa.3, ss.423-429, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14 Sayı: 3
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1007/s100510051050
  • Dergi Adı: EUROPEAN PHYSICAL JOURNAL B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.423-429
  • Gazi Üniversitesi Adresli: Evet

Özet

We report on Raman scattering measurements of all Raman-active phonons in wurtzite and zinc blende structure GaN epilayers grown on GaAs (001), GaAs (111)A, and GaAs (111)B oriented substrates by means of molecular beam epitaxy (MBE). Raman spectra are taken from these epilayers at room temperature and 77 K in backscattering geometry. The measured values of the phonon frequencies are in agreement with other studies and with lattice dynamic calculations of phonon modes in GaN zinc blende and wurtzite structures. We show that crystal quality is much better in samples grown on GaAs (111) substrates than in samples grown on GaAs (001) substrates. The observation of disorder-activated modes gives information about sample quality. Comparison of the spectra from different thickness epilayers shows that the GaN is more highly disordered close to the substrate, particularly for the (001) substrates.