Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures

Atmaca G., Narin P., Lisesivdin S. B., Kasap M., Sarikavak-Lisesivdin B.

PHILOSOPHICAL MAGAZINE, vol.95, no.1, pp.79-89, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 95 Issue: 1
  • Publication Date: 2015
  • Doi Number: 10.1080/14786435.2014.977976
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.79-89
  • Gazi University Affiliated: Yes


In this study, we have numerically investigated the conduction band structures, the carrier densities and the electron probability densities of pseudomorphic grown BexZn1-xO/ZnO heterostructures using self-consistent solutions of one-dimensional, non linear Schrodinger-Poisson equations. In the calculations, two-dimensional electron gas (2DEG) formations were observed in the studied heterostructures and the effects of layer thickness and Be-mole fraction (x) of BexZn1-xO barrier layer on 2DEG were described. For possible transistor device applications, 10nm BexZn1-xO barrier layer structure with x=0.08 has been suggested. For this structure, we examined the variation of electron mobility with temperature using analytical calculations. Because of the polarization-induced low carrier densities, we found that the background impurity scattering has a strong effect on total electron mobility even at room temperature.