Akademik Veri Yönetim Sistemi
3 rd International Conference on Light and Light-based Technologies, Ankara, Türkiye, 25 - 27 Mayıs 2022, ss.89
The single Crystal growth process with titanium (Ti) doped sapphire bulk crystal was
carried out with the Kyropoulos (KY) technique in the Photonics Application and
Research Center. The stages of this grown crystal are given in detail below:
After cleaning the insulation materials, 15 kg of alumina (Al2O3) and 30 gr Ti
consumables were loaded into the molybdenum (Mo) crucible. After loading, the guide
was attached to the Crystal molybdenum holder. After the cover part was closed, the
inside of the system was placed under vacuum. In order to start the crystal growth
process, the targeted power value was gradually increased to realize the melting
phase. Before the first contact of the guide crystal with the melt, the melt surface
condition was checked. After the conditions were met, the seeding stage was started.
In order to establish a thermodynamic equilibrium between the melt surface and the
guide crystal, the guide crystal was gradually lowered onto the melt surface. At a given
moment, the solid was brought into contact with the liquid. In order to minimize defects
caused by thermal shock caused by solid-to-liquid contact, a neck region of
approximately 10 cm in length was obtained under high tensile speed. Optimal
adjustments after the neck stage resulted in a voluminous single Crystal with a fixed
body diameter of 13 cm and a body length of 35 cm.