Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure

Akay D., Karadeniz S., Selcuk A. B., Bilge Ocak S.

PHYSICA SCRIPTA, vol.93, no.9, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 93 Issue: 9
  • Publication Date: 2018
  • Doi Number: 10.1088/1402-4896/aad2a7
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: gamma-ray irradiation, barrier height, ideality factor, series resistance, metal-polymer-semiconductor (MPS), thermionic emission theory, POLYCYCLIC AROMATIC-HYDROCARBONS, DISSOLVED ORGANIC-MATTER, CURRENT-VOLTAGE CHARACTERISTICS, SCHOTTKY DIODE, SOLAR-CELLS, SOIL, SI, HETEROJUNCTION, ENHANCEMENT, PESTICIDES
  • Gazi University Affiliated: Yes

Abstract

We have investigated the effects of Co-60 gamma-ray irradiation on the electrical properties of an Al/C24H12/p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series resistance (R-s), ideality factor (n) and barrier height (Phi(B)). The samples have been prepared using an evaporation technique and irradiated with a total dose range of 0-90 kGy at room temperature. Current-voltage (I-V) measurements have been performed before and after irradiation in the dark and at room temperature. It has been observed that the barrier height and series resistance values are decreased after irradiation while ideality factor is increased. Decreasing in R-s indicates that the product of the mobility and the free carrier concentration has increased due to the radiation defects. Experimental results show that this material can be modified using Co-60 gamma-ray irradiation.