Electrical and optical properties of p-Si based structures with lead oxide interfaces


Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol.294, 2023 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 294
  • Publication Date: 2023
  • Doi Number: 10.1016/j.mseb.2023.116552
  • Journal Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Current conduction mechanisms, I-V measurements, Norde, I-V, and Cheung methods, PbO thin film, UV–VIS spectroscopy
  • Gazi University Affiliated: Yes


Lead oxide thin film was performed by evaporation technique on the p-Si type substrate. The studied film was characterized using the UV–VIS spectroscopy method. The reflectance and transmittance measurements conducted at the normal incident of light between 300 and 1000 nm were analyzed to determine the optical dispersion of the film. It was estimated that the film' optical transmittance was 77% in the visible range The obtained absorption coefficient greater than 104 cm−1 showed that the electron transition was direct. The optical band gap energy value of the film was computed as 3.22 eV. Also, the electrical features of Al/PbO/p-Si diode were examined by observing its current–voltage (I-V) behavior at room temperature. Zero-bias barrier height (Φb0), ideality factor (n), series resistance (Rs) were obtained using the conventional Norde, I-V and Cheung methods. Also, the diode's dominant current conduction mechanisms were examined using the forward bias I-V data.