Photosensitive properties of Schottky type photodiodes prepared by spin coating of isoniazid Schiff base thin film on p-Si

Tezcan A. O., Oruç P., Tuğluoğlu N., Eymur S.

OPTICAL AND QUANTUM ELECTRONICS, vol.56, no.989, pp.1-20, 2024 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 56 Issue: 989
  • Publication Date: 2024
  • Doi Number: 10.1007/s11082-024-06770-4
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1-20
  • Gazi University Affiliated: Yes


In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the spin coating method, and an Al/PyMIs/p-Si/Al diode was fabricated. The I-V characteristics of the fabricated diode were measured under dark and from 20 to 100 mW/cm2 illumination intensities for both forward and reverse bias. Diode parameters, including saturation current (I0), ideality factor (n), and barrier height (b) were investigated for all measurements based on thermionic emission theory. The values n changed from 2.51 to 2.05, and the b changed from 0.77 eV to 0.86 eV as light intensity increased from dark to 100 mW/cm2. The series resistance (Rs) values of the diode were investigated using the modified Norde’s function and Cheung’s functions. An analysis of the forward log(I)−log(V) plot of Al/PyMIs/p-Si (MOmS)-type diode specified the carrier transport domination by ohmic conduction in the lower bias regions, by the space-charge-limited current (SCLC) at medium bias regions and the trap-charge limit current (TCLC) transport mechanism at higher bias regions. The fabricated diode exhibited typical photodiode behavior with reverse current values increasing from 9.13 × 10− 6 A to 1.05 × 10− 4 A, respectively. Furthermore, I−V characteristics illuminated from 20 to 100 mW/cm2 were also studied, and they indicated that the Al/PyMIs/p-Si diode could operate in a photovoltaic regime.