Research Information System
Karadeniz Fen Bilimleri Dergisi, vol.11, no.2, pp.328-339, 2021 (Peer-Reviewed Journal)
In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution.