Structural role of double layer amphoteric oxides forms on electrical conductivity: PbO/zinc oxide semiconductor


PHYSICA SCRIPTA, vol.97, no.9, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 97 Issue: 9
  • Publication Date: 2022
  • Doi Number: 10.1088/1402-4896/ac82d0
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: barrier height, ideality factor, series resistance, double-layer semiconductor (DLS), thermionic emission (TE) theory, HIGH IDEALITY FACTORS, QUANTUM DOTS, THEORETICAL-MODEL, ZNO NANOWIRES, DYE, SILVER, WATER, FERROMAGNETISM, PARAMETERS, VOLTAGE
  • Gazi University Affiliated: Yes


We have investigated the electrical properties of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes such as series resistance (R-s), ideality factor (n), and barrier height (phi(b)). The samples were manufactured by using an evaporation technique at room temperature. To obtain their main electrical parameters, current-voltage (I-V) measurements have been performed in the dark and at room temperature. In the study, we examined two diodes to evaluate the electrical characteristics of PbO/Zinc Oxide double-layer semiconductor (DLS) diodes using the thermionic emission (TE) theory, Norde's method, and Cheung's functions. While n, phi(b), and I-0 values of Diode 1 were found to be 4.02, 0.739 eV, and 1.506. 10(-8) A respectively, the same values of Diode 2 were calculated as 4.14, 0.724 eV, and 2.65.10(-8) A, respectively, by using the TE method. The values of n, phi(b), and R-s were also calculated using the Cheung's method, and they were found to be 10.048, 0.549 eV, and 4.058 k Omega, respectively, for Diode 1, while these values were calculated as 8.116, 0.659 eV, and 7.799 k Omega respectively, for Diode 2. phi(b) and R-s values are also as certained as 0.84 eV for Diode 1 and 0.80 eV for Diode 2, 18.2 k Omega for Diode 1 and 11.1 k Omega for Diode 2 using Norde Method, respectively. The forward bias I-V characteristics were used to obtain the energy distribution of the interface state density considering the effective barrier height's bias dependence. The change observed in the interface state density's magnitude ranged between 1.4 x 10(12) and 2.0 x 10(11) eV(-1) cm(-2). The evaluated series resistance indicates the product of mobility and free carrier concentration, ideality factor is a measure of how closely the diode follows the ideal diode equation, and barrier height also depends on the concentration of carriers in PbO/Zinc Oxide double-layer semiconductors.