Influence of interface traps on device performance of AlGaN/GaN HEMTS with Si3N4 passivation

Atmaca G., Evrensel A. E., LİŞESİVDİN S. B.

Turkish Physical Society 31th International Physics Congress, Muğla, Turkey, 21 July 2014, pp.371

  • Publication Type: Conference Paper / Summary Text
  • City: Muğla
  • Country: Turkey
  • Page Numbers: pp.371
  • Gazi University Affiliated: Yes