Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition


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ACAR S., LİŞESİVDİN S. B., Kasap M., Oezcelik S., Oezbay E.

THIN SOLID FILMS, vol.516, no.8, pp.2041-2044, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 516 Issue: 8
  • Publication Date: 2008
  • Doi Number: 10.1016/j.tsf.2007.07.161
  • Journal Name: THIN SOLID FILMS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2041-2044
  • Keywords: aluminium gallium nitride/gallium nitride, quantitative mobility spectrum analysis, two-dimensional electron gas, two-dimensional hole gas, MOBILITY-SPECTRUM ANALYSIS, TRANSPORT, ALN
  • Gazi University Affiliated: Yes

Abstract

Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved.