Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
THIN SOLID FILMS, cilt.516, sa.8, ss.2041-2044, 2008 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 516 Sayı: 8
- Basım Tarihi: 2008
- Doi Numarası: 10.1016/j.tsf.2007.07.161
- Dergi Adı: THIN SOLID FILMS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.2041-2044
- Anahtar Kelimeler: aluminium gallium nitride/gallium nitride, quantitative mobility spectrum analysis, two-dimensional electron gas, two-dimensional hole gas, MOBILITY-SPECTRUM ANALYSIS, TRANSPORT, ALN
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Gazi Üniversitesi Adresli: Evet
Özet
Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved.