Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.672 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733413
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.672
  • Gazi University Affiliated: Yes

Abstract

We present a study on the n-type ternary InGaN epilayers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type InGa1-xN (x=0.120 and 0.09) alloys is made for two samples. Structural and electrical properties were characterized by High X-Ray Diffraction and Hall effect respectively.