6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS , İstanbul, Turkey, 25 - 27 June 2018, pp.35-37
Frequency dependent dielectric properties of Zinc oxide (ZnO) based metal-insulator-semiconductor
(MIS) structure was studied. The ZnO thin layer on p-type silicon (100) was prepared by using atomic
layer deposition (ALD). The voltage and frequency dependent dielectric loss tangent (tan), dielectric
loss (ε''), dielectric constant (ε'), electrical conductivity (ac) and electrical modulus (M' and 'M') of
these structure have been studied in detail by using spectroscopic technique in the various applied
bias voltages and frequencies at room temperature. According to experimental results, ac , M', ε', ε',
tan, M'' and values were strongly depend on frequency and applied voltage in accumulation and
depletion region. While the values of ε' reduce with increasing frequency for each applied voltage, ε''
values decreases with increasing frequency and decreasing voltage. The ac is observed to weak
increase with increasing frequency. M' values increase with increasing frequency. The values of M''
give a peak and the peak location moves to higher frequency with rising applied voltage. The results
confirmed that interfacial polarization can be readily ingenerated at low frequency and interface states
located in the metal-semiconductor interface have an influence on the dielectric properties of