Illumination effects on the capacitance/conductance-voltage characteristics of Au/(PVC:Er2O3)/n-Si (MPS) type structure for 0.5 MHz at room temperature

Ulusoy M., Altındal Ş.

2nd International Conference on Light and Light-based Technologies (ICLLT) 2021, Ankara, Turkey, 26 - 28 May 2021, pp.73

  • Publication Type: Conference Paper / Summary Text
  • City: Ankara
  • Country: Turkey
  • Page Numbers: pp.73


In this study, Au/(PVC:Er2O3)/n-Si (MPS) structure was fabricated and then its capacitance/conductance -voltage (C/G-V) measurements were performed both in dark and under 100 illumination intensity in voltage range of -2/8V by 50 mV step. The basic electrical parameters such as doping-concentration of donor-atoms (Nd), barrier-height (FB), depletion-layer width (Wd), maximum-electric field (Em) at junction, and series-resistance (Rs) were obtained from the reverse-bias C-2-V plots as 1.44x1015 cm-3, 0.72 eV, 4.72x10-5 cm, 14.7 kV/cm, 168 W in dark and 4.93x1015 cm-3, 0.74 eV, 2,69x10-5 cm, 28.7 kV/cm, 138 W under illumination, respectively. Voltage dependent profile of Illumination induced density of surface states (Nss) was also extracted from the difference between dark and illumination C-V plot at about 1.5x11 mean value. It is clear that there is a shrinking in Wd, increase of Nd, FB, Em, and decrease of Rs due to restructure and reordering of Nss under illumination effect. In addition, all these results show that (PVC:Er2O3) polymer interfacial layer can be successfully instead of an insulator layer in respect of low-cost, flexibility, easy grown method.