Electrical and optical characterization of Al/MgO/p-Si (MIS) diode with magnesium oxide thin films by spraying method

Güllü Ö., Türkeri M., TATAROĞLU A.

Solid State Communications, cilt.403, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 403
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.ssc.2025.115992
  • Dergi Adı: Solid State Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, DIALNET, Civil Engineering Abstracts
  • Anahtar Kelimeler: Barrier diode, Electrical parameters, MgO film, Optical contants, Spraying
  • Gazi Üniversitesi Adresli: Evet

Özet

MgO films were deposited on a glass substrate using a spray coating method and annealed to obtain pure MgO phase. The films were characterized by XRD, AFM and UV–Vis spectrophotometry. XRD results showed a well-defined crystal structure with peaks corresponding to the (111), (200) and (220) orientations, with a crystallite size of 35.21 nm. AFM analysis revealed a rough surface morphology suitable for sensor and photocatalytic applications. Optical characterization revealed a transmittance (∼65 %) in the visible region and an optical band gap of 3.93 eV, making this material promising for optoelectronic devices. The extracted barrier height and ideality factor for the Al/MgO/p-Si (MIS) diode were 0.894 ± 0.050 eV and 1.454 ± 0.080, respectively. These findings suggest that the MgO layer significantly affects the electrical/optical properties of the diode, offering improved performance in electronic and optoelectronic applications.