In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current-voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (FB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The FB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm(2), respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm(2), respectively. Additionally, the series resistance (R-s) values from modified Norde method and interface state density (N-ss) values using current-voltage measurements have been determined. The values of R-s have been found to be 1924 and 5094 Omega at dark and 100 mW/cm(2), respectively. The values of N-ss have been found to be 4.76 x 10(12) and 3.15 x 10(12) eV(-1) cm(-2) at dark and 100 mW/cm(2), respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.