Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

LİŞESİVDİN S. B., Khan N. A., Mazzucato S., Balkan N., Adams M. J., Korpijarvi V., ...More

NANOSCALE RESEARCH LETTERS, vol.9, 2014 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 9
  • Publication Date: 2014
  • Doi Number: 10.1186/1556-276x-9-22
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Gazi University Affiliated: Yes


We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.