Laterally Inhomogeneous Barrier Analysis Using Capacitance-Voltage Characteristics of Identically Fabricated Schottky Diodes

Çavdar Ş. , Tuğluoğlu N., Akgul K. B. , Koralay H.

JOURNAL OF ELECTRONIC MATERIALS, vol.45, no.8, pp.3908-3913, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 8
  • Publication Date: 2016
  • Doi Number: 10.1007/s11664-016-4546-x
  • Page Numbers: pp.3908-3913


Au Schottky contacts (50 dots) on n-Si (100) were fabricated by thermal evaporation under the same conditions. The mean of the electrical parameters of the diodes were investigated by means of capacitance-voltage (C-V) measurements at 1 MHz. Even if the diodes were all equally fabricated, there was a diode-to-diode change. The values of barrier height (Phi(B)) were determined from the C-2-V characteristics, which ranged from 0.812 eV to 0.837 eV. The Gaussian fit of the barrier height distributions gave a mean of barrier height value of 0.822 eV and a standard value of 0.005 eV. Furthermore, the mean values of other parameters such as the carrier donor concentration (N-D), the diffusion potential at zero bias (V-0), the Fermi level (E-F), the image force lowering (Delta Phi(b)) and the space charge layer width (W-D) were investigated and determined to be 1.311 x 10(15) cm(-3), 0.575 V, 0.257 eV, 1.363 x 10(-2) eV, and 7.573 x 10(-5) cm, respectively.