A numerical study on subband structure of InxAl1-xN/GaN-based HEMT structures with low-indium (x < 0.10) barrier layer

Elibol K., Atmaca G., Tasli P., LİŞESİVDİN S. B.

SOLID STATE COMMUNICATIONS, vol.162, pp.8-12, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 162
  • Publication Date: 2013
  • Doi Number: 10.1016/j.ssc.2013.03.005
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.8-12
  • Keywords: InAlN/AlN/GaN, HEMT, Subband, 2DEG, 2-DIMENSIONAL ELECTRON-GAS, MOBILITY TRANSISTORS, ALGAN/GAN, HETEROSTRUCTURES, CHARGE, SIMULATION, TRANSPORT
  • Gazi University Affiliated: Yes

Abstract

The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrodinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values. (C) 2013 Elsevier Ltd. All rights reserved.