SOLID STATE COMMUNICATIONS, vol.162, pp.8-12, 2013 (SCI-Expanded)
Article / Article
SOLID STATE COMMUNICATIONS
Science Citation Index Expanded (SCI-EXPANDED), Scopus
InAlN/AlN/GaN, HEMT, Subband, 2DEG, 2-DIMENSIONAL ELECTRON-GAS, MOBILITY TRANSISTORS, ALGAN/GAN, HETEROSTRUCTURES, CHARGE, SIMULATION, TRANSPORT
Gazi University Affiliated:
The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrodinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values. (C) 2013 Elsevier Ltd. All rights reserved.