Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

Demirezen S., Altindal Ş., Uslu I.

CURRENT APPLIED PHYSICS, cilt.13, sa.1, ss.53-59, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 1
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.cap.2012.06.009
  • Dergi Adı: CURRENT APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.53-59
  • Anahtar Kelimeler: Photodiode, Illumination effect, Interface states, Series and shunt resistance, VOLTAIC ENERGY-CONVERSION, SCHOTTKY-BARRIER DIODES, MIS TUNNEL-DIODES, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, INTERFACE STATES, PHOTOVOLTAIC PROPERTIES, SOLAR-CELL, FABRICATION, SI
  • Gazi Üniversitesi Adresli: Evet

Özet

The forward and reverse bias current-voltage (I-V), capacitance/conductance-voltage (C/G-V) characteristics of the fabricated Au/PVA (Bi-doped)/n-Si photodiode have been investigated both in dark and under 250 W illumination intensity at room temperature. The energy density distribution profile of N-ss was extracted from the forward bias I-V measurements by taking the voltage dependence of effective barrier height (Phi(e)) and R-s for photodiode both in dark and under 250 W illumination cases. The exponential growth of the N-ss from midgap toward the bottom of the conductance band is very apparent for two cases. The obtained high value of n and R-s were attributed to the particular distribution of N-ss at metal/PVA interface, surface and fabrication processes, barrier inhomogeneity of interfacial polymer layer and the form of barrier height at M/S interface. While the values of C and G/w increase R-s and R-sh decrease under illumination, due to the illumination induced electron-hole pairs in depletion region. The voltage dependent N-ss profile was also obtained from the dark and illumination capacitance at 1 MHz and these values of N-ss are in good agreement. In addition, the fill factor (FF) under 250 W illumination level was found as 28.5% and this value of FF may be accepted sufficiently high. Thus, the fabricated Au/PVA (Bi-doped)/n-Si structures are more sensitive to light, proposing them as a good candidate as a photodiode or capacitance sensor for optoelectronic applications in modern electronic industry. (C) 2012 Elsevier B.V. All rights reserved.