Frequency dependent dielectric properties of Al/maleic anhydride (MA)/p-Si structures

Ocak S., Selcuk A. B., Bayram S. B., Ozbay A.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.17, pp.1747-1755, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 17
  • Publication Date: 2015
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1747-1755
  • Keywords: Schottky devices, Dielectric properties, Electric modulus, Electrical conductivity, Atomic polarizability, MALEIC-ANHYDRIDE, INTERFACE STATES, SCHOTTKY DIODES, THIN-FILMS, POLYMERIZATION, VOLTAGE
  • Gazi University Affiliated: Yes


Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and electrical conductivity of contact structures have been investigated in detail by using spectroscopic technique in a wide range of frequencies and applied bias voltages at room temperature. The values of dielectric constant, dielectric loss, dielectric loss tangent, real and imaginary parts of the electrical modulus and ac electrical conductivity were found considerably sensitive to frequency and applied bias voltage especially in depletion and accumulation regions. Experimental results indicate that the values of dielectric constant show a steep decrease with increasing frequency for each voltage. The values of dielectric loss as a function of voltage show a jump, and dielectric loss decreases with decreasing voltage and increasing frequency. The weak increasing of the ac electrical conductivity on frequency is observed. The real part of electric modulus increases with increasing frequency. Also, the imaginary part of electric modulus shows a peak and the peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the interfacial polarization can be more easily occurred at low frequencies and the majority of interface states at metal semiconductor interface contributes to deviation of dielectric properties of Al/MA/p-Si structures.