FREQUENCY DEPENDENT EFFECTS BEFORE AND AFTER GAMMARAY IRRADIATION ON AL/C24 H12 /P-SI MPS STRUCTURE

Bilge Ocak S., Orhan E.

6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS, İstanbul, Türkiye, 25 - 27 Haziran 2018, ss.29-31

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.29-31
  • Gazi Üniversitesi Adresli: Evet

Özet

Effects of gamma-ray irradiation are investigated on metal-polymer-semiconductor (MPS) in this study. Electrical characteristics of Al/C24 H12/p-Si MPS structure was analyzed before and after gamma-ray irradiation with the dose of 30kGy and 60kGy. It is seen that capacitance of MPS structure decreases after 60Co gamma-ray irradiation while conductance increases. This has been based upon the changes in the density of interface states which occur because of 60Co gamma-ray irradiation. Dielectric parameters, the density of interface states (Dit), the series resistance (Rs) and the barrier height (Φb) analysis of MPS structure have been calculated from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the MPS for before and after gamma irradiations at two different high frequency values of 500 kHz and 1 MHz. It has been found that barrier height, the series resistance and the density of the interface trap states strongly depend on applied gamma irradiation dose. The density of the interface trap state decreases due to a reduction in the recombination centers and the passivation of the Si surface