Research Information System
6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS, İstanbul, Turkey, 25 - 27 June 2018, pp.29-31
Effects of gamma-ray irradiation are investigated on metal-polymer-semiconductor (MPS) in this study.
Electrical characteristics of Al/C24 H12/p-Si MPS structure was analyzed before and after gamma-ray
irradiation with the dose of 30kGy and 60kGy. It is seen that capacitance of MPS structure decreases after
60Co gamma-ray irradiation while conductance increases. This has been based upon the changes in the density
of interface states which occur because of 60Co gamma-ray irradiation. Dielectric parameters, the density of
interface states (Dit), the series resistance (Rs) and the barrier height (Φb) analysis of MPS structure have
been calculated from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the MPS
for before and after gamma irradiations at two different high frequency values of 500 kHz and 1 MHz. It has
been found that barrier height, the series resistance and the density of the interface trap states strongly depend
on applied gamma irradiation dose. The density of the interface trap state decreases due to a reduction in the
recombination centers and the passivation of the Si surface