Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

LİŞESİVDİN S. B., Yildiz A., Kasap M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.1, no.9, pp.467-470, 2007 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 1 Issue: 9
  • Publication Date: 2007
  • Journal Name: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED)
  • Page Numbers: pp.467-470
  • Keywords: AlGaN/GaN, HEMT, Schrodinger equation, Poisson equation, 2DEG, AlN interlayer, AlGaN barrier, MOLECULAR-BEAM EPITAXY, GAN/ALGAN/GAN HETEROSTRUCTURES, TRANSPORT-PROPERTIES, ALGAN/GAN HEMTS, BAND PARAMETERS, QUANTUM-WELL, GAS, ALN/GAN, ALN, SEMICONDUCTORS
  • Gazi University Affiliated: Yes

Abstract

The investigating of the GaN-based high electron mobility transistors (HEMTs) is focused to achieve two goals: increase of carrier density and mobility. Increasing the number of the carriers in the 2-dimensional-electron-gas (2DEG) and localize the carriers in the 2DEG properly are required to achieve high performance. Inserting a thin undoped AlN interlayer between undoped AlxGa1-xN barrier and undoped GaN channel layer is one of the methods to achieve high performance AlxGa1-xN/GaN HEMT structures. In this work, self-consistent 1-band 1-dimension Schrodinger-Poisson equations are solved for pseudomorphically grown undoped AlxGa1-xN/GaN HEMT structures with and without AlN interlayer. The effects of AlN interlayer and AlxGa1-xN barrier layer thicknesses and different Al-mole fractions in AlxGa1-xN barrier layer on band structures, carrier densities and 2DEG wave functions are investigated.