Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties

Er I. K., Cagirtekin A. O., Artuc M., Acar S.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.32, no.2, pp.1677-1690, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 32 Issue: 2
  • Publication Date: 2021
  • Doi Number: 10.1007/s10854-020-04937-9
  • Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.1677-1690
  • Gazi University Affiliated: Yes

Abstract

As per this work, it is aimed to explore and analyze some dielectric characteristics-such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), AC conductivity (sigma(ac)), and real (M') and imaginary (M '') parts of the electric modulus-of Al/HfO2/p-Si Schottky diode design based on temperature and frequency. The HfO2 layer was grown on p-Si substrates by atomic layer deposition method. Al metal was deposited on the upper part of this structure as Schottky contact by e-beam evaporation technique. This structure has been studied in different applied bias voltages and frequencies at temperature ranging between 300 and 360 K. The capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/omega-V-f) characteristics of Al/HfO2/p-Si structure were measured in the frequency range of 10 kHz to 2 MHz by sweeping bias voltage levels (+/- 4 V, 50 mV steps). The experimental results and analyses confirmed that these dielectric properties of Al/HfO2/p-Si Schottky diode structure were very dependent on the frequency, bias voltage and temperature according to the presence of the interface states and distribution characteristics.