Quantitative mobility spectrum analysis for determination of electron and magneto transport properties of Te-doped GaSb

ACAR S., Kasap M., Isik B., Ozcelik S., Tugluoglu N., Karadeniz S.

Chinese Physics Letters, vol.22, no.9, pp.2363-2366, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 9
  • Publication Date: 2005
  • Doi Number: 10.1088/0256-307x/22/9/062
  • Journal Name: Chinese Physics Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2363-2366
  • Gazi University Affiliated: Yes

Abstract

Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature (35-350 K) and magnetic field (0-1.35 T). The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters (n L, nΓ, μL, μΓ, p and μp) on both the electron and magneto transports have been discussed. The EL-EΓ energy separation between the L and conduction band edges is also derived. ©2005 Chinese Physical Society and IOP Publishing Ltd.