Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene


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LİŞESİVDİN B., LİŞESİVDİN S. B.

Advances in Condensed Matter Physics, vol.2023, 2023 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 2023
  • Publication Date: 2023
  • Doi Number: 10.1155/2023/9933049
  • Journal Name: Advances in Condensed Matter Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Applied Science & Technology Source, Computer & Applied Sciences, Directory of Open Access Journals
  • Gazi University Affiliated: Yes

Abstract

In this computational study, a novel borophene polymorph, Ogee-Borophene, characterized by irregular decagon-shaped hollows was reported. The structure involves a deviation from hexagonal configurations found in all other known borophene polymorphs. The decagon-shaped hollow is highly related to the anisotropy of the structure, which results in three types of boron atoms with different electronic properties in the structure. In the study, the electronic structure and density of states of this novel structure were investigated with the help of density functional theory calculations. The electronic structure of Ogee-Borophene shows Dirac cone formations near the Fermi level. The discovery of a novel borophene polymorph, Ogee-Borophene, with irregular-shaped hollows represents a different point of view in the 2D materials field. The unique electronic properties of this material suggest that Ogee-Borophene has the potential to be used in a variety of applications, including transistors, and selective sensor applications without the need for additional doping.