Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Yildiz A., LİŞESİVDİN S. B., Kasap M., Bosi M.

SOLID STATE COMMUNICATIONS, cilt.149, ss.337-340, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 149
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.ssc.2008.11.026
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.337-340
  • Anahtar Kelimeler: InGaN, Electronic transport, TRANSPORT, CONDUCTIVITY, INN
  • Gazi Üniversitesi Adresli: Evet

Özet

Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of similar to 9.2 x 10(19) cm (3). An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity Of In0.17Ga0.83N exhibits a metal-semiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T - 180 K) and it becomes positive at relatively high temperatures (T - 190 K). In addition to this, a negative magnetoresistivity (MR) has been observed below 190 K. The temperature dependent resistivity Of In0.17Ga0.83N alloy is explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T - 180 K). At high temperatures (T - 180 K) the temperature dependent resistivity obeys T-2 law. (C) 2008 Elsevier Ltd. All rights reserved.