Mole fraction dependence of mobility in InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.670 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733411
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.670
  • Gazi University Affiliated: Yes

Abstract

Hall effect measurements was carried out at room temperature in three InxGa1-xN alloys. We have performed mobility curves as a function of In content. The effect of alloy scattering to mobility has been investigated in these samples.