Mole fraction dependence of mobility in InxGa1-xN alloys
6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.670, (Full Text)
- Publication Type: Conference Paper / Full Text
- Volume: 899
- Doi Number: 10.1063/1.2733411
- City: İstanbul
- Country: Turkey
- Page Numbers: pp.670
- Gazi University Affiliated: Yes
Abstract
Hall effect measurements was carried out at room temperature in three InxGa1-xN alloys. We have performed mobility curves as a function of In content. The effect of alloy scattering to mobility has been investigated in these samples.