Mole fraction dependence of mobility in InxGa1-xN alloys
6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.670, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733411
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.670
- Gazi Üniversitesi Adresli: Evet
Özet
Hall effect measurements was carried out at room temperature in three InxGa1-xN alloys. We have performed mobility curves as a function of In content. The effect of alloy scattering to mobility has been investigated in these samples.