Intersection behavior of the current-voltage (I-V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity


Arslan E., Badali Y., ALTINDAL Ş., ÖZBAY E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13167-13172, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 16
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s10854-020-03868-9
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.13167-13172
  • Gazi Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V) and capacitance-voltage (C-V) behaviors of the (Au/Ni)/HfAlO3/n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)-Vcurves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (phi(B0)) were extracted using the slope and intercept of the ln(I)-Vcurve before and after the intersection point based on lighting power. Although the phi(B0)values decrease with increasing light power,nincreases for two regions, and there is a strong linear relationship between them. The values of photo-current (I-ph) increase with the increasing lighting power due to the formation of electron-hole pairs. The slope of the double-logarithmicI(ph)-Pwas changed from 0.422 to 0.852, respectively, at - 2 V and - 9 V, which indicates the ongoing distribution ofN(ss). In addition, the profile of surface states (N-ss) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. TheN(ss)-Vcurve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution ofN(ss)and their restructuring and reordering under the effects of lighting and an electric field.