Impurity conduction in InxGa1-xAs

KASAP M., ÖZER M., Çolakoǧlu K.

Turkish Journal of Physics, vol.20, no.7, pp.740-746, 1996 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 20 Issue: 7
  • Publication Date: 1996
  • Journal Name: Turkish Journal of Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.740-746
  • Gazi University Affiliated: Yes


Resistivity measurements on InxGa1-xAs grown on semi-insulating GaAs by MBE and doped with Si to a carrier density of approximately 1016 cm-3 were made as a function of temperature (4.2-50 K) and pressure (0-8 kbar) for a wide range of alloy compositions. The resistivity analysis at low temperatures shows that the Mott transition occurs in the limited alloy composition range x = 0.30 - 0.60 at these doping densities. For alloy compositions x ≤ 0.20, the temperature and pressure dependence of the low temperature resistivity can be well explained by the thermally-activated hopping conduction law. At higher In compositions (x > 0.60), the conduction in the impurity band is of a metallic character instead of thermally-activated hopping conduction. © Tübi̇tak.