Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

Tan S. O., Tascioglu I., ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.68, sa.10, ss.5085-5089, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 68 Sayı: 10
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1109/ted.2021.3107229
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.5085-5089
  • Anahtar Kelimeler: Atomic layer deposition (ALD) technique, electric admittance, frequency dependence, polarization, surface states, INTERFACE STATES, CONDUCTANCE, LAYER, SI
  • Gazi Üniversitesi Adresli: Evet

Özet

MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency (C/G-V-f) data in the 1 kHz-5 MHz and +/- 3 V ranges at room temperature. Admittance measurements determine the surface states (N-ss) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal by N-ss at lower frequencies. In consequence with N-ss presence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [G(p)/omega - ln(f)] plot under various biases. In the energy range of (0.17 - E-v)-(0.67 - E-v), N-ss and their life/relaxation time (tau) values vary from 4.95 x 10(12) to 7.42 x 10(11) eV(-1).cm(-2) and from 7.85 x 10(-5) to 1.05 x 10(-6) s, respectively.