On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructures

Barkhordari A., Mashayekhi H., Amiri P., ALTINDAL Ş., Azizian-Kalandaragh Y.

Applied Physics A: Materials Science and Processing, cilt.129, sa.4, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 129 Sayı: 4
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s00339-023-06539-8
  • Dergi Adı: Applied Physics A: Materials Science and Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex
  • Anahtar Kelimeler: Dielectric response and ac conductivity, Frequency, interlayer, and polarization effects on dielectric properties, Gr and ZnTiO3 doped PVP interlayer, Polyvinyl-pyrrolidine (PVP), Schottky barrier diodes
  • Gazi Üniversitesi Adresli: Evet

Özet

To increase the performance of the metal–semiconductor (MS) structure, MS and pure polyvinyl-pyrrolidine (PVP), Gr, (ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed on the p-Si substrate in same conditions and impedance-measurements of them were performed in frequency range of 100 Hz–1 MHz at 1.5 V. These results show that the real/imaginary components of complex-dielectric (ε*), loss-tangent (tan δ), ac conductivity (σac), and complex-electric modulus (M*) are quite function of frequency at lower frequencies due the surface states (Nss), their relaxation-time (τ), series-resistance (Rs), interlayer, and the surface/dipole-polarization. The value of conductivity for all the samples is almost becomes constant for low-frequencies and then it starts to increase for high-frequencies range due to the increment of eddy current and energy-loss resulting in decreasing the Rs. The M″–M′ graph shows good semi-circular Cole–Cole curve for MPS structures with the Gr, (ZnTiO3) and (Gr-ZnTiO3) doped PVP interlayer which are represents the polarization process. The dielectric value of all MPS structures was found greater than that of MS one, but the tan δ value was lower. It is an evident that the used doped PVP interlayers leads to increase the energy storage capacity and reduce the energy losses.