Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation

ALTINDAL Ş., Barkhordari A., Pirgholi-Givi G., ULUSOY M., Mashayekhi H., ÖZÇELİK S., ...More

PHYSICA SCRIPTA, vol.96, no.12, 2021 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 96 Issue: 12
  • Publication Date: 2021
  • Doi Number: 10.1088/1402-4896/ac43d7
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded, Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: Schottky-Diodes (SDs), (ZnOMn-PVP) organic-interlayer, radiation effects on the I-V and C, G-V characteristics, voltage dependent profiles of series-resistance and surface-states, SI MS STRUCTURES, ZNO THIN-FILMS, CURRENT-VOLTAGE, AU/N-SI, CAPACITANCE-VOLTAGE, OPTICAL-PROPERTIES, SERIES RESISTANCE, INTERFACE STATES, C-V, PARAMETERS


The effect of Co-60-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements. Firstly, the values of reverse-saturation-current (I-o), ideality-factor (n), barrier-height (BH), shunt/series resistances (R-sh, R-s), and rectifying-rate (RR) were extracted from the I-V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (N-ss) versus energy (E-c-E-ss) profile was extracted from I-V data considering voltage-dependent of n and BH using Card-Rhoderick method. Secondly, the doping-donor atoms (N-d), Fermi-energy (E-F), BH, maximum electric-field (E-m), and depletion-layer width (W-d) were extracted from the linear-part of reverse-bias C-2-V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of R-s and radiation-induced of N-ss were extracted from the C/G-V plots by using Nicollian-Brews and the difference between C-V plots before and after irradiation, respectively. The peak behavior in the N-ss-V plots and shifts in its position was attributed to special-distribution of N-ss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I-V and C/G-V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.