Activation mechanism in InGaN grown by MOVPE

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.671 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733412
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.671
  • Gazi Üniversitesi Adresli: Evet

Özet

Activation mechanism in unintentionally-doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n-type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2 meV.