6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.671
Activation mechanism in unintentionally-doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n-type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2 meV.