A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors

Elibol K., Güneş C., Kuloğlu A. F., Boyalı E., LİŞESİVDİN S. B.

Turkish Physical Society 28th International Physics Congress, Muğla, Turkey, 6 - 09 September 2011, pp.711

  • Publication Type: Conference Paper / Summary Text
  • City: Muğla
  • Country: Turkey
  • Page Numbers: pp.711
  • Gazi University Affiliated: Yes