Electrical properties of Graphene/Silicon structure with Al2O3 interlayer

Kaymak N., Bayram Ö., Tataroğlu A., Bilge Ocak S., Orhan E.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.12, pp.9719-9725, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 12
  • Publication Date: 2020
  • Doi Number: 10.1007/s10854-020-03517-1
  • Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.9719-9725
  • Gazi University Affiliated: Yes

Abstract

The electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance-voltage (C/G-V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on -Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G- V and C-V measurements of this structure have been performed in 10 kHz-400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density ( D it) and series resistance ( R s) values. The values of D it and R s are dependent on frequency and increase with decreasing frequency. The R s - V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.