The effect of InxGa1-xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures (0.05 <= x <= 0.14)
CURRENT APPLIED PHYSICS, cilt.13, sa.1, ss.224-227, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 13 Sayı: 1
- Basım Tarihi: 2013
- Doi Numarası: 10.1016/j.cap.2012.07.012
- Dergi Adı: CURRENT APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.224-227
- Anahtar Kelimeler: InGaN back-barrier, MOCVD, XRD, Defect analyses, ELECTRON-MOBILITY, TRANSISTORS
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Gazi Üniversitesi Adresli: Evet
Özet
Al0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different InxGa1-xN back-barriers with In mole fractions of 0.05 <= x <= 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin InxGa1-xN back-barrier and the surrounding layers. (C) 2012 Elsevier B.V. All rights reserved.