Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation


PHYSICA SCRIPTA, vol.96, no.12, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 96 Issue: 12
  • Publication Date: 2021
  • Doi Number: 10.1088/1402-4896/ac369f
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: graphene, an insulator layer, gamma-ray irradiation, dielectric properties, electrical conductivity, ELECTRICAL CHARACTERISTICS, RAY IRRADIATION, SCHOTTKY
  • Gazi University Affiliated: Yes


The present work intends to discover the influences of Co-60 gamma (gamma) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range -6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.