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Çiftci Y.

J Nanosci Nanotechnol Appl, vol.5, no.101, pp.1-10, 2021 (Peer-Reviewed Journal)

  • Publication Type: Article / Article
  • Volume: 5 Issue: 101
  • Publication Date: 2021
  • Journal Name: J Nanosci Nanotechnol Appl
  • Page Numbers: pp.1-10
  • Gazi University Affiliated: Yes

Abstract

Abstract 8 with NaScGe compound semiconductor Heusler- Half of features thermoelectric and vibrational, elastic, electronic, structural The have computations principles-first the to regard with) 216. No (F43m group space with structure cubic has which count valence electron .considered was theory transport Boltzmann classical-semi NaScGe of properties electric-thermos the calculate To. investigated been and temperature Debye, factor anisotropy, ratio Poisson, modulus s’Young, modulus shear, constants elastic like, features elastic The calculated our to according, stable as found dynamically and mechanically been has compound This. discussed were velocities sound 02.1 gap band has which semiconductor a is compound this, structure band obtained the to According. properties phonon and elastic function a as) ZT (merit of figure and factor power, conductivity thermal electronic, conductivity electrical, coefficient Seebeck The. eV of results calculated The. doping type-p for factor power high a has NaScGe. investigated were temperature and potential chemical of Heusler-Half This. applications thermoelectric for used be may material investigated the that indicate NaScGe for) 1 (~parameter ZT .time first the for material thermoelectric as investigated been has compound semiconductor.