Electrical conduction properties of Si delta-doped GaAs grown by MBE

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Yildiz A., LİŞESİVDİN S. B., Altuntas H., Kasap M., Ozcelik S.

PHYSICA B-CONDENSED MATTER, vol.404, no.21, pp.4202-4206, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 404 Issue: 21
  • Publication Date: 2009
  • Doi Number: 10.1016/j.physb.2009.07.190
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.4202-4206
  • Gazi University Affiliated: Yes

Abstract

The temperature dependent Hall effect and resistivity measurements of Si delta-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si delta-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. (C) 2009 Elsevier B.V. All rights reserved.