Compositional effects on the interband transition in GaAs1-xPx ternary alloys

Cetin S. Ş., Mammadov T. S., Ozcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.9, ss.910-916, 2009 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 9
  • Basım Tarihi: 2009
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.910-916
  • Gazi Üniversitesi Adresli: Evet

Özet

GaAs1-xPx/GaAs alloys were grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) technique using GaP decomposition source The critical point (CP) energies of the interband-transition edges of the structures were determined by line-shape analyses on their dielectric functions measured by spectroscopic ellipsometry (SE) at room temperature in the 0.5-5 eV photon energy regions We obtained a new bowing parameter by analyzing effect of the phosphorous compositions on the E-0 transition energy The band gap energies of the alloys and their bowing value were also obtained by evaluating photoluminescence (PL) emission peak positions at the room temperature