Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.

CHINESE PHYSICS LETTERS, cilt.24, sa.10, ss.2930-2933, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 24 Sayı: 10
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1088/0256-307x/24/10/060
  • Dergi Adı: CHINESE PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2930-2933
  • Gazi Üniversitesi Adresli: Evet

Özet

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). Within the experimental error, the electron concentration in InxGa1-xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, 1nxGai_x1V (0.06 <= x <= 0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron-electron interactions and weak localization effects.