Electron transport in Ga-rich InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M., Bosi M.

CHINESE PHYSICS LETTERS, vol.24, no.10, pp.2930-2933, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 24 Issue: 10
  • Publication Date: 2007
  • Doi Number: 10.1088/0256-307x/24/10/060
  • Journal Name: CHINESE PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2930-2933
  • Gazi University Affiliated: Yes

Abstract

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1-xN (0.06 <= x <= 0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15-350K). Within the experimental error, the electron concentration in InxGa1-xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, 1nxGai_x1V (0.06 <= x <= 0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron-electron interactions and weak localization effects.