Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface

Bilgili A. K., Cagatay R., ÖZTÜRK M., ÖZER M.

SILICON, cilt.14, sa.6, ss.3013-3018, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14 Sayı: 6
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s12633-021-01093-5
  • Dergi Adı: SILICON
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Sayfa Sayıları: ss.3013-3018
  • Anahtar Kelimeler: Schottky, Structural, Electrical, n-InP, TiO2
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes, constructed with sputtering method on n-InP wafer, are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. Thickness of TiO2 interfacial layers are adjusted as 60 angstrom and 120 angstrom. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 angstrom TiO2 interfacial layer is a more ideal diode. It is seen that as thickness of TiO2 interface decrease Ag/TiO2/n-InP Schottky diode becomes more ideal. This result is explained in main text in connection with series resistance, difference between d-spacings of interface and wafer. Comments on relation of lattice mismatch with series resistance are also made.