The role of Co-60 gamma-ray irradiation on the interface states and series resistance in MIS structures

Tascioglu I., Tataroğlu A., Özbay A., Altındal Ş.

RADIATION PHYSICS AND CHEMISTRY, vol.79, pp.457-461, 2010 (SCI-Expanded) identifier identifier


The effect of gamma-ray exposure on the metal-insulator-semiconductor (MIS) structures has been investigated using the electrical characteristics at room temperature. The MIS structures are irradiated with Co-60 gamma-ray source. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height and ideality factor. The value of series resistance decreases with increasing dose. Experimental results confirmed that gamma-ray irradiation have a significant effect on electrical characteristics of MIS structures. (C) 2009 Elsevier Ltd. All rights reserved.