OPTOELECTRONIC PROPERTIES OF GaAs, GaP and ZnSe CATHODES IN A PLASMA-SEMICONDUCTOR CELL


Kurt H. H.

OPTOELECTRONIC PROPERTIES OF GaAs, GaP and ZnSe CATHODES IN A PLASMA-SEMICONDUCTOR CELL, Editors: Ikhmayies,Shadia Jamil,Kurt,Hatice Hilal (Eds.), Editör, Springer, London/Berlin , Zürich, ss.1-349, 2021

  • Yayın Türü: Kitapta Bölüm / Araştırma Kitabı
  • Basım Tarihi: 2021
  • Yayınevi: Springer, London/Berlin 
  • Basıldığı Şehir: Zürich
  • Sayfa Sayıları: ss.1-349
  • Editörler: Editors: Ikhmayies,Shadia Jamil,Kurt,Hatice Hilal (Eds.), Editör
  • Gazi Üniversitesi Adresli: Evet

Özet

This chapter is focused on the optical and electrical characterization of semiconductor materials in a plasma –semiconductor cell because of their applications in electronic devices and infrared image converter cells. The main focus was to get the discharge current and discharge light emission of the plasma in the structure in the case of various interelectrode distance d, gas pressure p and cathode diameter D. The gas discharges systems with semiconductor cathode are the subjects of interest in recent years due to their applications such as semiconductor processing, surface treatment, sterilization. Despite the fact that semiconductor electronic materials have been known for years, more information is needed to completely understand the mechanisms controlling the plasma process.  A great effort has been made to get knowledge about these materials during the years in the fields of optics and electronics. In that manner, the present section concerns with the optoelectronic characterization of some Infrared sensitive semiconductors to explore the physical parameters having great importance in the investigated structure. Briefly, optoelectronic properties of III-V (GaAs and GaP) and II_VI group semiconductor electronic material (ZnSe) have been studied in a plasma-semiconductor structure. The interest in those materials has increased mainly due to their emergence of important applications over a wide range of areas such as power amplifier, light-emitting diodes, detectors, photovoltaic cells and microwave.  GaAs, GaP and ZnSe are significant materials which are used as Infrared detectors in device application. They exhibit good performance and fast response against Infrared radiation.