Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films

Altuntas H., Ozcelik S.

GAZI UNIVERSITY JOURNAL OF SCIENCE, cilt.30, sa.3, ss.281-287, 2017 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 30 Sayı: 3
  • Basım Tarihi: 2017
  • Dergi Adı: GAZI UNIVERSITY JOURNAL OF SCIENCE
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
  • Sayfa Sayıları: ss.281-287
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, SiO2 films with thicknesses 50 nm were grown on n-GaAs substrate by plasma enhanced chemical vapor deposition technique. To investigate the electrical transport mechanisms, Au/SiO2/n-GaAs (MOS) type capacitor structures were fabricated and measured current density-voltage (J-V) characteristics at room temperature. As a function of the applied gate voltage, Schottky emission, Frenkel-Poole emission, and trap-assisted tunneling were found as dominant current transport mechanisms under depletion mode. The obtained trap levels were attributed to defects related with the Ga vacancies formed at the SiO2/GaAs interface.