Microscopy research and technique, cilt.87, sa.9, ss.2154-2170, 2024 (SCI-Expanded)
In this study, ZnO seed layers with different cycles were formed on glass substratesby the sol–gel technique, and ZnO nanorods were grown on them by the hydrother-mal method. Morphology and the structural characterization of the seed films andthe ZnO nanorods are carried out by field emission scanning electron microscopy(FE-SEM) and x-ray diffraction techniques. In addition, to investigate the effect ofseed layer deposition cycles on the optical properties of the ZnO nanorod arrays,UV/visible spectrophotometer and photoluminescence (PL) measurements were per-formed. The changes in structural and optical parameters such as dislocation density,strain, crystallite size, and optical band gap values on each seed layer deposition cyclewere examined. The highest optical band gap and crystallite size were obtained forZnO nanorods with 4 cycles seed layer as 3.22 eV and 63.6 nm, respectively. Also, inthe PL spectrum, the largest ratio of UV-emission region to weak-visible emissionregion was obtained in ZnO nanorods having 4 cycles. In addition, the glucose detec-tion properties of ZnO nanorods having 4 cycles were investigated using the PL mea-surements and it was found that UV-emission peak intensity of ZnO nanorodsdecreased as the glucose concentration increased from 8 to 40 mM. The resultsshow that the number of deposition cycles of the seed layer has a strong influenceon the orientation, crystal quality, and optical band gap of the growing ZnO nanor-ods, as well as significantly affecting their morphological properties.Research Highlights• High quality ZnO nanorods were grown on glass substrates by hydrothermal method.• The effect of ZnO seed layer cycles on the structural, optical, and morphologicalcharacteristics of ZnO nanorods grown on were examined.• It was found that the number of cycles of the seed layer is a critical parameter forgrowing quality and well-aligned ZnO nanorods.K E Y W O R D Shydrothermal, nanorods, seed layer cycles, zinc oxide1 | I N T RO DU CT I O NZinc oxide (ZnO) is classified as a semiconductor in group II–VI amongsemiconductors and has a wide band gap of 3.37 eV at roomtemperature, a large binding energy of 60 meV, and high thermal andmechanical stability. ZnO film is transparent to the light and absorbsUV rays, and creating a piezoelectric response (Aspoukeh et al., 2022;Klingshirn, 2007; Look, 2001; Özgür et al., 2005). In addition, it is anReceived: 20 October 2023 Revised: 31 March 2024 Accepted: 20 April 2024DOI: 10.1002/jemt.245932154 © 2024 Wiley Periodicals LLC. Microsc Res Tech. 2024;87:2154–2170.wileyonlinelibrary.com/journal/jemt