The possibility of increasing the spectral sensitivity of the photographic system with a Si:Zn semiconductor detector have been studied. The cooling photographic system is designed to extend the sensitivity of the photographic system toward longer infrared wavelengths (up to 4 mum). The photodetector was irradiated on the back-side with infrared radiation in a particular wavelength range that was used to control the photoconductivity of the detector. The IR radiation excites the photosensitive semiconductor detector of the device thus controlling the current density and the visible light emission from the gas discharge gap. Due to the cooling the dark current in the photodetector material is extremely decreased and the sensitivity with respect to the incoming infrared radiation is increased. The size of the discharge gap d (70 mum) and the residual gas pressure p (70 Torr) are chosen to ensure a sufficiently bright light. The assesment of the image formation is then based on analysis of the discharge light emission, visualized by taking a photograph through the transparent anode plate. Expressions are obtained for the maximum photographic sensitivity.