Modeling and Experimental Analysis of Photovoltaic Parameters of GaInP/GaAs Dual Junction p-i-n Solar Cell

KINACI B.

BRAZILIAN JOURNAL OF PHYSICS, cilt.51, sa.3, ss.553-558, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 51 Sayı: 3
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s13538-021-00893-9
  • Dergi Adı: BRAZILIAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, INSPEC
  • Sayfa Sayıları: ss.553-558
  • Anahtar Kelimeler: GaInP/GaAs solar cell, p-i-n structure, Modeling, Electrical characterization
  • Gazi Üniversitesi Adresli: Hayır

Özet

In this study, the modeling and experimental analysis of photovoltaic parameters of the GaInP/GaAs dual-junction (DJ) p-i-n solar cell structure were examined. The design of the GaInP/GaAs DJ p- i-n solar cell structure was done with the drift-diffusion model (DDM), and this structure was grown with the molecular beam epitaxy (MBE) system. The fundamental parameters (open-circuit voltage (V-OC), short-circuit current density (J(SC)), fill factor (FF), and energy conversion efficiency (eta)) of these structures were determined by both modeling and the current-voltage experimental measurements. All electrical output parameters of the GaInP/GaAs DJ p-i-n solar cells obtained from modeling and experimental were compared. An increase in solar cell efficiency was observed with the integration of the i-layer.